MZ-75E250BW/EU - Samsung 850 EVO MZ-75E250 - Halvledarenhet - krypterat - 250 GB - inbyggd - 2.5" - SATA 6Gb/s - buffert: 512 MB - Self-Encrypting Drive (SED), TCG Opal Encryption 2.0

MZ-75E250BW/EU - Samsung 850 EVO MZ-75E250 - Halvledarenhet - krypterat - 250 GB - inbyggd - 2.5" - SATA 6Gb/s - buffert: 512 MB - Self-Encrypting Drive (SED), TCG Opal Encryption 2.0 MZ-75E250BW/EU

1 114 SEK Från 48 SEK/mån 
  
Information
95 i lager
Samsung
TillverkareSamsungArtnr
MZ-75E250BW/EU
Formfaktor2.5"
GränssnittSerial ATA-600
Kapacitet250 GB
  • Optimize daily computing with TurboWrite technology for unrivaled read/write speeds
  • Get into the fast lane with the improved rapid mode
  • Guaranteed endurance and reliability bolstered by 3D V-NAND technology
  • Compute longer with improved energy efficiency backed by 3D V-NAND
  • Secure valuable data through advanced - AES 256 encryption
  • Protect against overheating with a highly responsive - Dynamic Thermal Guard
  • Acquire an integrated in-house solution consisting of top-quality components
Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO but up to 1.9x faster random write speeds. The 850EVO delivers the top of its class performance in sequential read and write speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.

Samsung's Magician software which provides rapid mode for 2x faster processing data speeds on a system level by utilizing unused PC memory (DRAM) as cache storage. The Magician increased the maximum memory usage in rapid mode. You also get a 2x performance boost in all random queue depth.

The 850 EVO delivers significantly longer battery life on your notebook with a controller optimized for 3D V-NAND now enabling device sleep at a highly efficiency. The 850 EVO is now 25% more power efficient during write operations thanks to 3D V-NAND only consuming half the energy than that of planar 2D NAND.

 

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